Contact-structure producing method for solar cell, involves tempering semiconductor-substrate with germination layer for diffusion of dopant from germination layer into semiconductor-substrate

摘要

The method involves providing a flat shaped semiconductor-substrate (2) i.e. silicon substrate, with two sides (3, 4), which rest opposite to each other. A germination layer (10) is coated on one of the sides of the semiconductor-substrate, and includes dopant e.g. phosphor and boron, for doping the semiconductor-substrate. The semiconductor-substrate is tempered with the germination layer for diffusion of the dopant from the germination layer into the semiconductor-substrate, where the germination layer is galvanically isolated. The germination layer is selected from one of phosphoric layer, nickel layer, cobalt layer and silver layer.