首页> 外国专利> Method for determining contact area of probe fitted on conductor or semiconductor material, involves obtaining contact area of probe and insulating layer, and measuring capacitance of contact area

Method for determining contact area of probe fitted on conductor or semiconductor material, involves obtaining contact area of probe and insulating layer, and measuring capacitance of contact area

机译:确定安装在导体或半导体材料上的探针接触面积的方法,涉及获得探针和绝缘层的接触面积,并测量接触面积的电容

摘要

The method involves applying voltage between a probe (3) and a conductor or semiconductor materials (10a, 10b), where the probe consists of electrically conductive liquid (3a) such as mercury. A contact area of the probe and an insulating layer (11) is obtained using a specific formula, where the insulating layer of specific thickness (d) and dielectric constant is formed between the probe and the conductor or the semiconductor materials and made of silica. The capacitance of the contact area is measured. An independent claim is also included for a device for determining a contact area of a probe fitted on a conductor or a semiconductor material, comprising a capacitance measuring instrument.
机译:该方法包括在探针(3)和导体或半导体材料(10a,10b)之间施加电压,其中探针由诸如汞的导电液体(3a)组成。使用特定的公式获得探针和绝缘层(11)的接触面积,其中在探针和导体或半导体材料之间形成具有特定厚度(d)和介电常数的绝缘层并且由二氧化硅制成。测量接触区域的电容。还包括一种用于确定安装在导体或半导体材料上的探针的接触面积的装置的独立权利要求,该装置包括电容测量仪器。

著录项

  • 公开/公告号DE102009010890A1

    专利类型

  • 公开/公告日2010-09-02

    原文格式PDF

  • 申请/专利权人 SICED ELECTRONICS DEVELOPMENT GMBH & CO. KG;

    申请/专利号DE20091010890

  • 发明设计人 PETERS DETHARD;STEIN RENE;

    申请日2009-02-27

  • 分类号G01R31/26;H01L21/66;G01B7/32;

  • 国家 DE

  • 入库时间 2022-08-21 18:28:24

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