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Method for determining contact area of probe fitted on conductor or semiconductor material, involves obtaining contact area of probe and insulating layer, and measuring capacitance of contact area
Method for determining contact area of probe fitted on conductor or semiconductor material, involves obtaining contact area of probe and insulating layer, and measuring capacitance of contact area
The method involves applying voltage between a probe (3) and a conductor or semiconductor materials (10a, 10b), where the probe consists of electrically conductive liquid (3a) such as mercury. A contact area of the probe and an insulating layer (11) is obtained using a specific formula, where the insulating layer of specific thickness (d) and dielectric constant is formed between the probe and the conductor or the semiconductor materials and made of silica. The capacitance of the contact area is measured. An independent claim is also included for a device for determining a contact area of a probe fitted on a conductor or a semiconductor material, comprising a capacitance measuring instrument.
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