Schottky diode for applying a high power and method of manufacturing

摘要

The invention relates to a Schottky diode that comprises a substrate (24), an active layer (21) made of a semiconducting material, a so-called Schottky contact layer (27), an ohmic contact conducting layer (25), said substrate further including at least one via-hole (28) in order to define a membrane above said via-hole, having a so-called lower face at the level of the substrate and a so-called upper face remote from the substrate, characterised in that the membrane includes at least the following stack of layers starting from said so-called lower face: the so-called Schottky contact layer; the layer of semi-conducting material; the ohmic contact layer being at the upper face of said membrane. The invention also relates to a method for making such a diode.