The three-layer magnetic, for its embodiments, the magnetic field sensor, magnetic memory and logic gate magnetic implementing such an element

摘要

This magnetic element a three-layer, comprises, on a substrate, a first layer of oxide, a hydride or nitride 0, surmounted by a layer of magnetic metal m, it - even surmounted by a second layer of oxide, nitride hydride or o ′, or of a metal layer is not ferromagnetic.'. The layer m is continuous, has a thickness less than or equal to 5 nm, and its magnetization parallel to the plane of the layers in the absence of the layers o and o'. There are, for a range of temperature equal to or greater than the ambient temperature, a magnetic anisotropy of interfacial perpendicular to the plane of the layers at the interfaces o / w and w / o ′, which is able to reduce the demagnetizing field of the layer m or to orient the magnetization of the layer m substantially perpendicular to the plane of the layers.