THREE-LAYER MAGNETIC ELEMENT, METHOD FOR THE PRODUCTION THEREOF, MAGNETIC FIELD SENSOR, MAGNETIC MEMORY, AND MAGNETIC LOGIC GATE USING SUCH AN ELEMENT

摘要

This three-layer magnetic element comprises, on a substrate, a first oxide, hydride or nitride layer O having a metal magnetic layer M mounted thereon, the latter having either a second oxide, hydride or nitride layer O′, or a non-ferromagnetic metal layer M′ mounted thereon.;Layer M is continuous, has a thickness of 1 to 5 nm and the magnetisation thereof is parallel to the layer plane in the absence of layers O and O′.;There is, for a range of temperature equal to or greater than ambient temperature, interfacial magnetic anisotropy perpendicular to the layer plane on interfaces O/M and M/O′ that is capable of decreasing the effective demagnetising field of layer M or orienting the magnetisation of layer M in a manner substantially perpendicular to the layer plane.