ELECTRODE STRUCTURE FOR PLASMA CVD DEVICE, PLASMA CVD DEVICE USING THE STRUCTURE, AND METHOD OF FORMING FILM

摘要

PROBLEM TO BE SOLVED: To provide an electrode structure for a plasma CVD device, which reduces the frequency of maintenance management work and is less prone to warp, to provide a plasma CVD device using the structure, and to provide a method of forming a film.;SOLUTION: The electrode structure 10 for a plasma CVD device includes a first surface 58 in one thickness direction Z1 and a second surface in the other thickness direction Z2. The first surface is positioned to face a substrate which is subject to a chemical vapor deposition and on which a plurality of grooves 63 are formed. The second surface provides a plurality of grooves and its surface area is equal to that of the first surface.;COPYRIGHT: (C)2012,JPO&INPIT