SUSCEPTOR FOR VAPOR PHASE GROWTH DEVICE, AND VAPOR PHASE GROWTH DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a susceptor for a vapor phase growth device, capable of preventing a flaw and a contact trace in a backside of an epitaxial wafer and hardly causing deformation in high temperature treatment, and a vapor phase growth device using the susceptor.;SOLUTION: In the susceptor for a vapor phase growth device, the entire surface or at least a wafer support of the susceptor, a base material of which is made of SiC, is covered with glassy carbon.;COPYRIGHT: (C)2011,JPO&INPIT