METHOD OF FORMING ITO ELECTRODE, ITO ELECTRODE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE INCLUDING THE ITO ELECTRODE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming an ITO electrode which can further reduce the resistance of the ITO electrode, the ITO electrode for a semiconductor device formed by the method, and the semiconductor device including the ITO electrode.;SOLUTION: The method of forming the ITO (indium tin oxide) electrode 50 in the semiconductor device 1 includes steps for forming the electrode 50 through electron beam evaporation under a deposition rate of 1 Å/sec or higher and 5 Å/sec or lower and an oxygen pressure of 0.005-0.02 Pa and then calcining the electrode at a predetermined temperature, thereby obtaining the ITO electrode 50 of favorable quality.;COPYRIGHT: (C)2011,JPO&INPIT