METHOD FOR MANUFACTURING LIGHT RECEIVING ELEMENT ARRAY AND LIGHT RECEIVING ELEMENT ARRAY, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER AND EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a light receiving element array and a method for the manufacturing the same, which maintain the crystalline quality of an light receiving layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the light receiving element array; and a method for manufacturing the same.;SOLUTION: The method for manufacturing the light receiving element array 1 having a plurality of light receiving regions 21, includes the steps of: growing the light receiving layer 7 on an n-type InP substrate 3; growing an InP window layer on the light receiving layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of light receiving regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the light receiving layer 7.;COPYRIGHT: (C)2011,JPO&INPIT