首页> 外国专利> COMPOSITION FOR REMOVING CSD COATING FILM, METHOD FOR REMOVING CSD COATING FILM USING THE SAME, FERROELECTRIC THIN FILM, AND METHOD OF MANUFACTURING THE SAME

COMPOSITION FOR REMOVING CSD COATING FILM, METHOD FOR REMOVING CSD COATING FILM USING THE SAME, FERROELECTRIC THIN FILM, AND METHOD OF MANUFACTURING THE SAME

机译:用于去除CSD涂层膜的组合物,使用相同的去除CSD涂层膜的方法,铁电薄膜以及制造相同的方法

摘要

PPROBLEM TO BE SOLVED: To provide a composition for removing a CSD solution coating film, capable of preventing generation of particles by removing a film on an outer circumferential end of a substrate without generating cracks and local peeling, and to provide a method of manufacturing a ferroelectric thin film using the same. PSOLUTION: The composition for removing a CSD coating film containing one or two types of organic solvent selected from β-diketones, β-ketoesters, polyalcoholes, carboxylic acids, alkanolamines, α-hydroxycarboxylic acid, α-hydroxycarbonyle derivative, and hydrazone derivative and water, is injected or dripped to remove the outer circumferential end of the CSD coating film. PCOPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种用于去除CSD溶液涂膜的组合物,该组合物能够通过去除基板的外周端上的膜而防止颗粒的产生而不会产生裂纹和局部剥离,并提供一种方法。使用该材料制造铁电薄膜的方法。

溶液:用于除去包含选自β-二酮,β-酮酸酯,聚醇,羧酸,链烷醇胺,α-羟基羧酸,α-羟基羰基化合物中的一种或两种类型的有机溶剂的CSD涂膜的组合物。注入或滴加衍生物,衍生物和水以除去CSD涂膜的外周端。

版权:(C)2011,日本特许厅&INPIT

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