Manufacturing method and device manufactured thereby the bulk mono-crystalline gallium-containing nitride obtained substrate and its substrate of bulk mono-crystalline gallium-containing nitride.

摘要

To provide a device manufactured by the method and the epitaxy substrate and the substrate made of it to obtain bulk mono-crystalline gallium-containing nitride containing ions of Group 1 metal ion and an acceptor dopant. A is composed of crystallization (crystallization) step onto the seed from ammonia-containing solution in a supercritical single-crystalline gallium-containing nitride, the molar ratio of the supercritical ammonia-containing solution of the acceptor dopant ions at least 0.0001 is there. In addition, after the step to make crystallized on the seed, a temperature between 950 ℃ and 1200 ℃, preferably consists of annealing the nitride at a temperature between 950 ℃ and 1150 ℃. .BACKGROUND