METHOD FOR FORMING HIGH GERMANIUM CONCENTRATION SiGe STRESSOR

摘要

PROBLEM TO BE SOLVED: To provide a method for forming an SiGe stressor, and to provide a transistor structure of an integrated circuit.;SOLUTION: The method for forming the SiGe stressor includes: a step of depositing a first SiGe layer on at least one of a source area and a drain area of a semiconductor substrate having a channel between the source area and the drain area; and a step of converting the top of the first SiGe layer to an oxide layer and converting the bottom of the first SiGe layer to a second SiGe layer, wherein the second SiGe layer has a higher Ge concentration than the first SiGe layer.;COPYRIGHT: (C)2011,JPO&INPIT