SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, ILLUMINATING APPARATUS USING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To control peeling of a reflective layer and deterioration of reflection characteristics of a semiconductor light emitting element which is mounted with flip chip (FC).;SOLUTION: The semiconductor light emitting element is composed by laminating an n-type semiconductor layer, light emitting layer, and p-type semiconductor layer 160, and a first electrode 200 which is a cathode, formed on the p-type semiconductor layer 160 and is equipped with a first crystalline transparent electrode layer 210 and a second amorphous transparent electrode layer 220a between the p-type semiconductor layer 160 and a reflective layer 220b. The first crystalline transparent electrode layer 210 improves the adhesion with the p-type semiconductor layer 160, and the second amorphous transparent electrode layer 220a inhibits the peeling of the reflective layer 220b. Then the first transparent electrode layer 210 and the second transparent electrode layer 220a transmit light emitted from the light emitting layer and inhibit the deterioration of the reflection characteristics.;COPYRIGHT: (C)2011,JPO&INPIT