首页> 外国专利> METHOD FOR CUTTING SAPPHIRE SINGLE CRYSTAL BY WIRE SAW AND SINGLE CRYSTAL SAPPHIRE SUBSTRATE

METHOD FOR CUTTING SAPPHIRE SINGLE CRYSTAL BY WIRE SAW AND SINGLE CRYSTAL SAPPHIRE SUBSTRATE

机译:线锯和单晶蓝宝石基板切割蓝宝石单晶的方法

摘要

PROBLEM TO BE SOLVED: To provide a method for cutting a sapphire single crystal by a wire saw suitable at the time of production of a single crystal sapphire substrate wherein a surface warp shape is isotropically a recessed surface, and the single crystal sapphire substrate.;SOLUTION: A plurality of respective wires 10 provided between at least two rotary rollers A and B in parallel under tension at a predetermined interval are allowed to unidirectionally or reciprocally run while the wire row comprising a plurality of the wires 10 is relatively pressed to the sapphire single crystal 20 having a columnar shape or almost columnar shape and rotated centering around the center axis in the longitudinal direction thereof to cut the sapphire single crystal 20 to thereby obtain a plurality of sapphire single crystal wafers. In this method for cutting the sapphire single crystal 20 by the wire saw, the number of rotations of the sapphire single crystal 20 is set to 15-150 rpm under a condition that the linear velocity of the wires is 300-500 m/min.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种通过线锯切割蓝宝石单晶的方法,该方法适用于生产单晶蓝宝石基板和单晶蓝宝石基板的单晶蓝宝石基板,其中表面翘曲形状是各向同性的凹面。解决方案:在至少两根旋转辊A和B之间以预定间隔平行设置的多根相应线10允许单向或往复运动,同时将包括多根线10的线排相对地压在蓝宝石上具有圆柱状或近似圆柱状的单晶20,并以其长轴方向上的中心轴为中心旋转,以切割蓝宝石单晶20,从而得到多个蓝宝石单晶晶片。在这种通过线锯切割蓝宝石单晶20的方法中,在线的线速度为300-500m / min的条件下,将蓝宝石单晶20的转数设置为15-150rpm。 ;版权:(C)2011,日本特许厅和INPIT

著录项

  • 公开/公告号JP2011025429A

    专利类型

  • 公开/公告日2011-02-10

    原文格式PDF

  • 申请/专利权人 SUMITOMO METAL MINING CO LTD;

    申请/专利号JP20090170832

  • 发明设计人 SATO TOSHIO;

    申请日2009-07-22

  • 分类号B28D5/04;B24B27/06;H01L21/304;

  • 国家 JP

  • 入库时间 2022-08-21 18:22:06

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