METHOD AND DEVICE FOR REMOVING PHOSPHORUS IMPURITY OR BORON IMPURITY FROM LIQUID POLYCHLOROSILANE AND AGENT FOR REMOVING PHOSPHORUS IMPURITY OR BORON IMPURITY FROM LIQUID POLYCHLOROSILANE

摘要

PROBLEM TO BE SOLVED: To provide a method and device for removing phosphorus impurities or boron impurities from crude liquid polychlorosilanes in a manufacturing process for obtaining a high-purity silicon crystal from metal class silicon, and to provide a removing agent.;SOLUTION: The removing method comprises contacting an activated carbon having an average grain size of 0.3-1.00 mm, having a volume of fine pores of ≤0.10 mL/g of a diameter of fine pores of 50-22,500 nm according to the method of mercury intrusion method, having a diameter of fine pores of 100-400 nm at the peak of the volume of fine pores in the diameter of fine pores of ≥50 nm, having a specific surface area measured by the BET method of ≥1,300 m²/g, having a filling density of ≥0.55 g/mL, having strongly heated residues of ≤0.5 mass%, having a dust incidence by water shake tests of ≤600 ppm (mass/mass), and a hardness of ≥99.5%, with the liquid polychlorosilanes.;COPYRIGHT: (C)2011,JPO&INPIT