SURFACE PLASMON INTENSIFYING FLUORESCENCE SENSOR, CHIP STRUCTURE USED IN THE SAME, AND SPECIMEN DETECTION METHOD USING THE SURFACE PLASMON INTENSIFYING FLUORESCENCE SENSOR

摘要

PROBLEM TO BE SOLVED: To provide a chip structure used in a surface plasmon intensifying fluorescence sensor, capable of accurately detecting the fluorescence emitted from a fluorescent substance excited by irradiating a metal membrane with exciting light to produce a compressional wave (surface plasmon), and capable of detecting fluorescence with ultrahigh precision even if detection sensitivity is raised.;SOLUTION: The chip structure used in the surface plasmon intensifying fluorescence sensor is at least constituted of the metal membrane, the reaction layer formed on one side of the metal membrane, and the dielectric member formed on the other side of the metal membrane; and when the fluorescent substance of the reaction layer formed on the metal membrane is excited by applying the exciting light from a light source to the metal membrane from the outside of the dielectric member to increase the electric field on the metal membrane, the dielectric member has an exciting light selecting section, allowing light with an exciting wavelength exciting the fluorescent substance of the reaction layer to arrive at the metal membrane and reducing the arrival of light with the fluorescent wavelength of the fluorescent substance at the metal membrane.;COPYRIGHT: (C)2011,JPO&INPIT