首页> 外国专利> With the sublimation which is activated chemically at high temperature in regard to the seed zinc oxide (ZnO) the device in order to do method and this method of manufacturing polycrystals and the monocrystal

With the sublimation which is activated chemically at high temperature in regard to the seed zinc oxide (ZnO) the device in order to do method and this method of manufacturing polycrystals and the monocrystal

机译:对于种子氧化锌(ZnO),通过在高温下化学活化的升华,该装置才能实现制造多晶和单晶的方法以及该方法。

摘要

A method for preparing polycrystalline or single-crystal zinc oxide ZnO on a seed placed in an enclosure under a controlled atmosphere, by sublimation of a zinc oxide source placed in a crucible inside the enclosure and distant from the seed, by formation of gas species, transport of gas species, condensation of gas species on the seed, recombination of the ZnO at the surface of the seed, growth of polycrystalline or single-crystal ZnO on the seed, and cooling of the polycrystalline or single-crystal ZnO, wherein: the zinc oxide source is heated by induction at a temperature, a so-called sublimation temperature, from 900 to 1,400° C. under a pressure from 2.10−3 atmospheres to 0.9 atmospheres; CO is generated in situ as a sublimation activator by supplying at least one oxidizing species, or a mixture of an oxidizing species and of at least one inert gas on a solid carbon source placed inside the enclosure; and control of the stoichiometry of the ZnO is achieved by providing a localized supply with controlled flow rate, for example in an amount from 1 SCCM to 100 SCCM, of at least one oxidizing species or of a mixture of at least one oxidizing species and of at least one inert gas, in the vicinity of a growth interface of the ZnO. A device for carrying out the method.
机译:一种通过在受控气氛下放置在封闭空间中的种子上制备多晶或单晶氧化锌ZnO的方法,方法是升华放置在封闭空间内的坩埚中并远离种子的氧化锌源,通过形成气体物质来实现,气体种类的迁移,种子上气体种类的冷凝,种子表面ZnO的重组,种子上多晶或单晶ZnO的生长以及多晶或单晶ZnO的冷却,其中:通过感应在所谓的升华温度,从2.1大气压到3个大气压至0.9个大气压的压力下将氧化锌源从900℃升高到1400℃。通过将至少一种氧化性物质或氧化性物质与至少一种惰性气体的混合物供应到放置在外壳内部的固态碳源上,CO作为升华活化剂原位生成; ZnO的化学计量的控制和控制是通过提供至少一种氧化性物质或至少一种氧化性物质与至少一种氧化性物质的混合物的流速受控的局部供给来实现的,例如流速为1 SCCM至100 SCCM。在ZnO的生长界面附近的至少一种惰性气体。用于执行该方法的设备。

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