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It is used by the cleaning process of the substrate for the semiconductor device,

机译:它用于半导体器件基板的清洗工艺中,

摘要

PROBLEM TO BE SOLVED: To provide a cleaning liquid used for a cleaning process of a substrate for a semiconductor device performed, after a chemical-mechanical polishing process in manufacturing a semiconductor device, causing no corrosion or oxidation of a copper wiring, even when the substrate for the semiconductor device having the copper wiring is applied, and efficiently removing the remaining impurities on the surface of an object to be cleaned without causing surface roughness, and to provide a cleaning method that uses the same.;SOLUTION: A cleaning liquid is used for a cleaning process of a substrate for a semiconductor device, performed after a chemical-mechanical polishing process in manufacturing of a semiconductor device, and contains polycarboxylic acid, an anionic surfactant having an aromatic ring structure in the molecule, a high-molecular compound having an acidic group in a side chain, and a low-molecular-weight polyethylene glycol. The cleaning liquid is such that the pH is 5 or smaller, and a cleaning method that uses the same is also provided.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种清洗液,该清洗液用于在制造半导体器件的化学机械抛光工艺之后进行的半导体器件基板的清洗工艺中,即使在清洗时也不会引起铜布线的腐蚀或氧化。涂覆具有铜布线的半导体器件的基板,并在不引起表面粗糙度的情况下有效地去除待清洗物体表面上的残留杂质,并提供使用该清洗方法的清洗方法。在半导体器件的制造中经过化学机械抛光处理之后用于半导体器件的基板的清洁工艺中使用,并且包含多羧酸,分子中具有芳香环结构的阴离子表面活性剂,高分子化合物在侧链上具有酸性基团和低分子量聚乙二醇。 pH值等于或小于5的清洁液,并提供使用该清洁液的清洁方法。;版权所有:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP4777197B2

    专利类型

  • 公开/公告日2011-09-21

    原文格式PDF

  • 申请/专利权人 富士フイルム株式会社;

    申请/专利号JP20060245735

  • 发明设计人 西脇 良典;

    申请日2006-09-11

  • 分类号H01L21/304;

  • 国家 JP

  • 入库时间 2022-08-21 18:20:18

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