Low dielectric constant amorphous silica-based coating film obtained from the forming method and the method of low dielectric constant amorphous silica-based coating film

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a low dielectric constant amorphous silica coating film in which a dielectric constant is small like ≤3.0, a Young's elasticity modulus is ≥10.0 GPa and further the film strength is ≥1.0 GPa in hardness.;SOLUTION: The forming method includes a step (a) wherein a silicon compound resulting from the hydrolysis of a tetraalkyl orthosilicate (TAOS) and a specific alkoxysilane (AS) under the presence of tetraalkyl ammonium hydrooxide (TAAOH) or the tetraalkyl orthosilicate (TAOS) is subjected to hydrolysis or partial hydrolysis under the presence of the tetraalkyl ammonium hydrooxide (TAAOH), and then it is mixed with the alkoxysilane (AS) or its hydrolyzate or its partial hydrolyzate, and furthermore, a liquid-state composition containing the silicon compound resulting from the hydrolysis of a part or all thereof as needed is prepared; a step (b) of coating a surface of a wafer with the liquid-state composition; a step (c) of applying heating treatment to the wafer in a temperature of 80 to 350°C; and a step (d) of applying electron beam onto a film formed on the substrate to cure the film.;COPYRIGHT: (C)2006,JPO&NCIPI