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Low dielectric constant amorphous silica-based coating film obtained from the forming method and the method of low dielectric constant amorphous silica-based coating film

机译:由低介电常数非晶态二氧化硅基涂膜的形成方法和低介电常数非晶态二氧化硅基涂膜的方法

摘要

PPROBLEM TO BE SOLVED: To provide a method of stably forming a low-dielectric constant amorphous silica-based coating having a small relative dielectric constant of not more than 3.0 and coating strength of Young's elasticity modulus of not less than 3.0 GPa on a substrate. PSOLUTION: The forming method of the low-dielectric constant amorphous silica-based coating at least processes in steps including (a) a step of applying a liquid composition containing a hydrolyzate of an organic silicon compound obtained by hydrolysis to a substrate in the presence of tetraalkyl ammonium hydroxide (TAAOH); (b) a step of housing the substrate in an apparatus as required, and drying the coating formed on the substrate at a temperature condition of 25-340°C; (c) a step of introducing overheated steam into the apparatus to heat the coating at a temperature condition of 105-450°C to execute heating processing; and (d) a step of introducing a nitride gas into the apparatus as required, and baking the coating at a temperature condition of 350-450°C. PCOPYRIGHT: (C)2008,JPO&INPIT
机译:

要解决的问题:提供一种稳定地形成低介电常数的无定形二氧化硅基涂层的方法,该涂层具有较小的相对介电常数不大于3.0且杨氏弹性模量的涂层强度不小于3.0 GPa。基板。

解决方案:低介电常数非晶态二氧化硅基涂层的形成方法至少包括以下步骤:(a)将包含通过水解获得的有机硅化合物的水解产物的液体组合物施涂到基材中的步骤。四烷基氢氧化铵(TAAOH)的存在; (b)根据需要将基板容纳在设备中,并在25-340℃的温度条件下干燥形成在基板上的涂层的步骤; (c)将过热蒸汽引入设备以在105-450℃的温度条件下加热涂层以执行加热处理的步骤; (d)根据需要将氮化气体引入设备中,并在350-450℃的温度条件下烘烤涂层的步骤。

版权:(C)2008,日本特许厅&INPIT

著录项

  • 公开/公告号JP5014709B2

    专利类型

  • 公开/公告日2012-08-29

    原文格式PDF

  • 申请/专利权人 日揮触媒化成株式会社;

    申请/专利号JP20060231202

  • 发明设计人 中島 昭;小松 通郎;江上 美紀;

    申请日2006-08-28

  • 分类号C09D183/00;C09D183/04;C09D183/02;H01L21/316;H01L21/768;H01L23/522;

  • 国家 JP

  • 入库时间 2022-08-21 17:38:11

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