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The phase which forms the gate dielectric film in formation manner of the polysilicon gate where the germanium of the MOS transistor dopes and the formation mannered null substrate
The phase which forms the gate dielectric film in formation manner of the polysilicon gate where the germanium of the MOS transistor dopes and the formation mannered null substrate
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机译:以多晶硅栅极的形成方式形成栅极介电膜的相,其中掺杂了MOS晶体管的锗和形成的空衬底
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摘要
A method of forming polycrystalline silicon germanium gate electrode is disclosed. The method include the steps of forming gate insulation layer on a substrate, forming a polycrystalline silicon layer on the gate insulation layer and making a plasma doping of germanium to the polycrystalline silicon layer. Generally, boron is doped to the polycrystalline silicon after the step of the plasma doping of germanium. The process of plasma doping of germanium comprises the step of forming germanium contained plasma and enhancing bias electric potential to substrate for the formulated germanium plasma to be accelerated and injected to the polycrystalline silicon layer revealed. If the present invention is applied to CMOS transistor device, doping mask for the germanium plasma doping can be used.
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