Production method of the MIT element, and its MIT element which include the metal insulator transfer thin film and that metal insulator transfer thin film of the Ge basis

摘要

Is not the composite material of 2 elements or more and it is formed from Ge unit element substance, it is possible to grow physically easily, the method of producing the MIT element, and the aforementioned MIT element which include the MIT thin film and the aforementioned MIT thin film of the Ge basis which can solve the problem regarding the secondary phase quality due to structural defect and the impurity which is included is offered. The aforementioned MIT element, the germanium on the baseplate and the aforementioned baseplate (Ge) is formed from unit element substance, discontinuous metal insulator transfer (MIT) includes with MIT thin film of the Ge basis which occurs and 2 where it touches to the MIT thin film of the aforementioned Ge basis thin film electrodes at least at specified transfer voltage, through aforementioned thin film electrode, features that the aforementioned discontinuity MIT occurs with voltage or the electric current which is impressed, in the MIT thin film of the aforementioned Ge basis.