GERMANIUM(GE) BASED METAL-INSULATOR TRANSITION(MIT) THIN FILM, MIT DEVICE COMPRISING THE SAME MIT THIN FILM AND METHOD OF FABRICATING THE SAME MIT DEVICE

摘要

A Ge based MIT thin film, the MIT device, the method for manufacturing the same are provided to easily grow the material of the MIT thin film by using the Ge element material. The MIT device comprises the substrate(100), and the Ge base MIT thin film (300a), at least two electrode thin films(410a,420a). The Ge base MIT thin film is formed on the substrate and generates the discontinuity metal-insulator transition(MIT) in the transition voltage. The electrode thin film is contacted with the Ge base MIT thin film. The Ge base MIT thin film causes the discontinuity MIT by voltage or the applied current.