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ESD protection device of the output driver stage

机译:输出驱动器级的ESD保护装置

摘要

I disclose ESD at the output driver stage of the semiconductor chip to (Electro-Static Discharge) protection device. And comprise a NMOS transistor and the source PMOS transistor and a source connected to the first power source is connected to the second power supply, ESD protection devices of the output driver stage of the invention, the internal circuit to the gate of each MOS transistor The output signal is applied respectively, in the ESD protection device of the output driver stage coupled to an output pad, the drain of each MOS transistors separation between the gate poly and the contact formed on the drain region of the MOS transistor relatively larger than the value by (Design Rule) design rule spacing, was decided.
机译:我在半导体芯片的输出驱动器级向(静电放电)保护装置公开了ESD。并且包括NMOS晶体管和源极PMOS晶体管,并且源极连接到第一电源,该源极连接到第二电源,本发明的输出驱动器级的ESD保护器件,内部电路连接到每个MOS晶体管的栅极。在分别连接至输出焊盘的输出驱动器级的ESD保护器件中分别施加输出信号时,每个MOS晶体管的漏极在栅极多晶硅与形成在MOS晶体管漏极区域上的触点之间的距离相对大于由(设计规则)设计规则间距决定。

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