Contact resistance being improved semiconductor structure and its production method (semiconductor structure where contact resistance is improved)

摘要

Topic Contact resistance of structure was improved, namely the semiconductor structure which it decreases is offered.Solutions Making use of self organization polymer technology, the nanosaizu pattern where one is arranged at least inside the material which exists in the conductive contact territory of semiconductor structure is formed. The material which possesses the nanosaizu pattern which is arranged is interconnect structure or the semiconductor source of the field-effect transistor and the conductive body of the drain territory. All territory (namely boundary territory) for after contact point formation expands due to the fact that the alignment nanosaizu patterning material exists inside the contact point territory, contact resistance of structure decreases with this. Due to the decrease of contact resistance, the electric current which passes by structure improves. In addition to the above-mentioned thing, because with method and structure of this invention, the connecting territory continues to be constant, junction capacitance of structure does not receive influence. Selective figure Figure 5