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Microcrystalline silicon deposition for thin film solar cell applications

机译:用于薄膜太阳能电池应用的微晶硅沉积

摘要

Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate.
机译:如权利要求中所述的本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。在一个实施例中,提供了一种在基板上形成薄膜多结太阳能电池的方法。该方法包括将衬底放置在反应区中,向该反应区提供气体混合物,其中该气体混合物包括含硅化合物和氢气,并在第一位置处在衬底上形成本征型微晶硅层的第一区域。沉积速率,以高于第一沉积速率的第二沉积速率在衬底上形成本征型微晶硅层的第二区域,以较低的第三沉积速率在衬底上形成本征型微晶硅层的第三区域比第二沉积速率高。

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