Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in n-I-p microcrystalline silicon solar cells

摘要

To optimize the performance of microcrystalline silicon carbide (μc-SiC:H) window layers in n-I-p type microcrystalline silicon (μc-Si:H) solar cells, the influence of the rhenium filament temperature in the hot wire chemical vapor deposition process on the properties of uc-SiC:H films and corresponding solar cells were studied. The filament temperature T_F has a strong effect on the structure and optical properties of μc-SiC:H films. Using these μc-SiC:H films prepared in the range of T_F = 1800-2000 ℃ as window layers in n-side illuminated uc-Si:H solar cells, cell efficiencies of above 8.0% were achieved with 1 μm thick μc-Si:H absorber layer and Ag back reflector.