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Ferroelectric thin film manufacturing method, a voltage applied etching apparatus, a ferroelectric crystal thin film substrate and the ferroelectric crystal wafer
Ferroelectric thin film manufacturing method, a voltage applied etching apparatus, a ferroelectric crystal thin film substrate and the ferroelectric crystal wafer
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机译:铁电薄膜的制造方法,电压施加蚀刻装置,铁电晶体薄膜基板和铁电晶体晶片
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摘要
And a surface of the other face of the one facing each other, and using a strong etching rate of the one surface is larger than the etching rate of the face of the other dielectric crystal in a state where the polarization directions are aligned in one direction and is strong this I for etching a surface of one of the dielectric crystal. As well as etching and applying a predetermined voltage to the ferroelectric crystal. As a result, the etching progresses, the thickness of the ferroelectric crystal reaches the desired thickness, the direction of polarization of the ferroelectric crystal is inverted, and the progress of the etching is stopped automatically. As a result, it is possible to manufacture a ferroelectric crystal thin film having a uniform thickness in a large area and very thin.
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