A method for manufacturing a GaN-based nitride semiconductor free-standing substrate

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a stress-free GaN-based nitride compound semiconductor at a low cost by a simple process.;SOLUTION: A method for manufacturing a GaN-based nitride semiconductor self-supporting substrate includes: a step of preparing a substrate; a step of forming a GaN dot and an NH₄Cl layer on the substrate; a step of forming a low-temperature GaN buffer layer on the GaN dot and the NH₄Cl layer; a step of forming a GaN nitride semiconductor layer on the low-temperature GaN buffer layer; and a step of naturally removing the GaN-based nitride semiconductor layer from the substrate by returning the substrate temperature to a normal temperature.;COPYRIGHT: (C)2009,JPO&INPIT