A method for detecting failure of database patterns of a photo mask including designing the database patterns of the photo mask according to a design rule of a semiconductor element; performing optical proximity correction (OPC) of the designed database patterns; and detecting failure of the database patterns by obtaining a plurality of bias values based on at least two space widths according to each of line critical dimensions (CDs) of the designed database patterns and by detecting the shape of the pattern having the optimum bias value. The method applies different space widths to the patterns according to critical dimensions of lines of the patterns of the photo mask to preliminarily detect patterning failure varied according to illuminating systems, sub-films, and thicknesses of resist, and to correct failure of the patterns, such as collapse or bridges of the patterns, generated from the different lengths of patterns lines having the same critical dimension, using different bias values.
展开▼
