FLASH MEMORY DEVICE AND OPERATING METHOD FOR CONCURRENTLY APPLYING DIFFERENT BIAS VOLTAGES TO DUMMY MEMORY CELLS AND REGULAR MEMORY CELLS DURING ERASURE

摘要

Integrated circuit flash memory devices, such as NAND flash memory devices, include an array of regular flash memory cells, an array of dummy flash memory cells and an erase controller. The erase controller is configured to concurrently apply a different predetermined bias voltage to the dummy flash memory cells than to the regular flash memory cells during an erase operation of the integrated circuit flash memory device. Related methods are also described.