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Metal Oxide Resistance Based Semiconductor Memory Device With High Work Function Electrode
Metal Oxide Resistance Based Semiconductor Memory Device With High Work Function Electrode
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机译:具有高功函数电极的基于金属氧化物电阻的半导体存储器件
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摘要
Various aspect are directed to a memory device or memory cell with a metal-oxide memory element arranged in electrical series along a current path between at least a first electrode, a metal-oxide memory element adjacent to the first electrode, and a second electrode. The first electrode comprises an electrode material having a first work function. The metal-oxide memory element comprises a metal-oxide material having a second work function. The first work function is greater than the second work function. Thermionic emission characterizes the current through this memory.
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