首页> 外国专利> MASK ROM DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE MASK ROM DEVICE, AND METHODS OF FABRICATING MASK ROM DEVICE AND SEMICONDUCTOR DEVICE

MASK ROM DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE MASK ROM DEVICE, AND METHODS OF FABRICATING MASK ROM DEVICE AND SEMICONDUCTOR DEVICE

机译:掩膜ROM设备,包括掩膜ROM设备的半导体设备以及制造掩膜ROM设备和半导体设备的方法

摘要

A mask read-only memory (ROM) device, which can stably output data, includes an on-cell and an off-cell. The on-cell includes an on-cell gate structure on a substrate and an on-cell junction structure within the substrate. The off-cell includes an off-cell gate structure on the substrate and an off-cell junction structure within the substrate. The on-cell gate structure includes an on-cell gate insulating film, an on-cell gate electrode and an on-cell gate spacer. The on-cell junction structure includes first and second on-cell ion implantation regions of a first polarity and third and fourth on-cell ion implantation regions of a second polarity. The off-cell gate structure includes an off-cell gate insulating film, an off-cell gate electrode and an off-cell gate spacer. The off-cell junction structure includes first and second off-cell ion implantation regions of the first polarity and a third off-cell ion implantation region of the second polarity.
机译:可以稳定输出数据的掩模只读存储器(ROM)设备包括一个单元上和一个单元外。单元上包括衬底上的单元上栅结构和衬底内的单元上结结构。电池外单元包括在衬底上的电池外栅结构和在衬底内的电池外结结构。单元上栅结构包括单元上栅绝缘膜,单元上栅电极和单元上栅间隔物。单元上结结构包括具有第一极性的第一和第二单元上离子注入区域以及具有第二极性的第三和第四单元上离子注入区域。单元外栅结构包括单元外栅绝缘膜,单元外栅电极和单元外栅间隔物。胞外结结构包括具有第一极性的第一和第二胞外离子注入区和具有第二极性的第三胞外离子注入区。

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