Mask-free prototyping of metal-oxide- semiconductor devices utilizing focused electron beam induced deposition

摘要

Focused electron beam induced deposition (FEBID) is a novel direct-writing technique to produce noble metal nanostructures. In this work, FEBID has been employed for the first time to fabricate metal-oxide-semiconductor capacitors (MOSCAPs). Experimental parameters such as precursor temperature, substrate temperature and the (de)focus of the electron beam have been optimized to deposit electrode structures of a relatively large area within a short timeframe. Using FEBID, gold electrodes have been deposited on top of an atomic layer deposited (ALD) dielectric aluminum oxide layer. Chemical composition of the produced structures has been studied using energy dispersive X-ray spectroscopy (EDX). Current-voltage (Ⅰ-Ⅴ) measurements have confirmed the conductivity of FEBID gold nanowires (NWs). Measured capacitance-voltage (C-V) characteristics of FEBID-fabricated MOSCAP prototypes resemble the typical C-V characteristics of conventionally fabricated MOSCAPs, thus confirming the functionality of our FEBID devices. Illustration of a MOS capacitor fabricated by FEBID.