LASER IRRADIATION APPARATUS, IRRADIATION METHOD USING THE SAME, AND METHOD OF CRYSTALLIZING AMORPHOUS SILICON FILM USING THE SAME

摘要

Provided are a laser irradiation apparatus, an irradiation method using the same, and a method of crystallizing an amorphous silicon film using the same. Particularly, a laser irradiation apparatus which can reduce a deviation of an intensity of a laser beam, an irradiation method using the same, and a method of crystallizing an amorphous silicon film using the same, which can improve uniformity in crystallization into a polycrystalline silicon thin film, are provided.;The laser irradiation apparatus includes a laser oscillator configured to oscillate a laser beam, and an optical system disposed in front of the laser oscillator, and configured to modify the laser beam and irradiate the modified beam to a subject. The optical system includes a beam splitter configured to split the laser beam and a luminous flux adjuster configured to adjust a flux of the laser beam split by the beam splitter.