N-SIDE ELECTRODE, NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

An n-side electrode that can inhibit the reduction in ohmic properties is provided. The n-side electrode is an n-side electrode for a nitride semiconductor light-emitting element, and includes an Al layer forming an ohmic contact to an n-type nitride semiconductor layer and having a thickness of 30 nm or greater.