首页>
外国专利>
Power transistor with improved high-side operating characteristics and reduced resistance and related apparatus and method
Power transistor with improved high-side operating characteristics and reduced resistance and related apparatus and method
展开▼
机译:具有改善的高端操作特性和减小的电阻的功率晶体管以及相关的装置和方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method includes forming a transistor device on a first side of a semiconductor-on-insulator structure. The semiconductor-on-insulator structure includes a substrate, a dielectric layer, and a buried layer between the substrate and the dielectric layer. The method also includes forming a conductive plug through the semiconductor-on-insulator structure. The conductive plug is in electrical connection with the transistor device. The method further includes forming a field plate on a second side of the semiconductor-on-insulator structure, where the field plate is in electrical connection with the conductive plug. The transistor device could have a breakdown voltage of at least 600V, and the field plate could extend along at least 40% of a length of the transistor device.
展开▼