首页> 外国专利> Method for manufacturing a semiconductor device wherein the electrical connection between two components is provided by capillary phenomenon of a liquid conductor material in a cavity therebetween

Method for manufacturing a semiconductor device wherein the electrical connection between two components is provided by capillary phenomenon of a liquid conductor material in a cavity therebetween

机译:用于制造半导体器件的方法,其中两个部件之间的电连接通过其间的腔中的液体导体材料的毛细现象提供。

摘要

A method for manufacturing a semiconductor device includes: (a) transferring an electronic component that has an electrode and formed on a first substrate from the first substrate to a second substrate; and (b) forming a wiring line electrically coupling the electrode and a terminal on the second substrate. A cavity is provided between the electrode of the electronic component transferred on the second substrate and the second substrate, and the wiring line is formed in the cavity.
机译:一种用于制造半导体器件的方法,包括:(a)将具有电极并形成在第一基板上的电子部件从第一基板转移到第二基板; (b)在第二基板上形成将电极和端子电连接的配线。在转移到第二基板上的电子部件的电极与第二基板之间设置有空腔,并且在该空腔中形成布线。

著录项

  • 公开/公告号US7923293B2

    专利类型

  • 公开/公告日2011-04-12

    原文格式PDF

  • 申请/专利权人 CHIHARU IRIGUCHI;

    申请/专利号US20080019958

  • 发明设计人 CHIHARU IRIGUCHI;

    申请日2008-01-25

  • 分类号H01L21/60;H01L29/786;

  • 国家 US

  • 入库时间 2022-08-21 18:11:24

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