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Method of fabricating nanowire memory device and system of controlling nanowire formation used in the same
Method of fabricating nanowire memory device and system of controlling nanowire formation used in the same
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机译:纳米线存储器件的制造方法及其中使用的控制纳米线形成的系统
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摘要
A method of fabricating a nanowire memory device, and a system of controlling nanowire formation used in the same method are provided. In the method of fabricating a nanowire memory device which includes a substrate; an electrode formed on the substrate and insulated from the substrate; and a nanowire having its one end connected with the electrode and formed at a given length, the method comprises: forming an electrode and a dummy electrode to be paired with the electrode on the substrate; forming the nanowire between the electrode and the dummy electrode while measuring a current flowing between the electrode and the dummy electrode, and cutting power applied between the electrode and the dummy electrode when the current measured is a given value; and removing the dummy electrode.
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