首页> 外国专利> Thin film transistor (TFT) array substrate and fabricating method thereof that protect the TFT and a pixel electrode without a protective film

Thin film transistor (TFT) array substrate and fabricating method thereof that protect the TFT and a pixel electrode without a protective film

机译:在没有保护膜的情况下保护TFT和像素电极的薄膜晶体管阵列基板及其制造方法

摘要

A thin film transistor array substrate and a fabricating method thereof are disclosed. The thin film transistor array substrate protects a thin film transistor without a protective film and accordingly reduces the manufacturing cost. In the thin film transistor array substrate, a gate electrode is connected to a gate line. A source electrode is connected to a data line crossing the gate line to define a pixel area. A drain electrode is opposed to the source electrode with a channel therebetween. A semiconductor layer is in the channel. A pixel electrode in the pixel area contacts the drain electrode over substantially the entire overlapping area between the two. A channel protective film is provided on the semiconductor layer corresponding to the channel to protect the semiconductor layer.
机译:公开了一种薄膜晶体管阵列基板及其制造方法。薄膜晶体管阵列基板在没有保护膜的情况下保护薄膜晶体管,从而降低了制造成本。在薄膜晶体管阵列基板中,栅电极连接至栅线。源极连接到与栅极线交叉的数据线,以限定像素区域。漏电极与源电极相对,其间具有沟道。半导体层在通道中。像素区域中的像素电极在两者之间的基本上整个重叠区域上与漏极接触。在与沟道相对应的半导体层上设置沟道保护膜以保护半导体层。

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