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Method and circuit for configuring memory core integrated circuit dies with memory interface integrated circuit dies

机译:用存储器接口集成电路管芯配置存储器核心集成电路管芯的方法和电路

摘要

A memory device comprises a first and second integrated circuit dies. The first integrated circuit die comprises a memory core as well as a first interface circuit. The first interface circuit permits full access to the memory cells (e.g., reading, writing, activating, pre-charging and refreshing operations to the memory cells). The second integrated circuit die comprises a second interface that interfaces the memory core, via the first interface circuit, an external bus, such as a synchronous interface to an external bus. A technique combines memory core integrated circuit dies with interface integrated circuit dies to configure a memory device. A speed test on the memory core integrated circuit dies is conducted, and the interface integrated circuit die is electrically coupled to the memory core integrated circuit die based on the speed of the memory core integrated circuit die.
机译:存储装置包括第一和第二集成电路管芯。第一集成电路管芯包括存储核心以及第一接口电路。第一接口电路允许对存储单元的完全访问(例如,对存储单元的读取,写入,激活,预充电和刷新操作)。第二集成电路管芯包括第二接口,该第二接口经由第一接口电路将存储器核心与外部总线(诸如与外部总线的同步接口)相接口。一种技术将存储器核心集成电路管芯与接口集成电路管芯相结合以配置存储装置。在存储器核心集成电路管芯上进行速度测试,并且基于存储器核心集成电路管芯的速度将接口集成电路管芯电耦合到存储器核心集成电路管芯。

著录项

  • 公开/公告号US7990746B2

    专利类型

  • 公开/公告日2011-08-02

    原文格式PDF

  • 申请/专利权人 SURESH N. RAJAN;

    申请/专利号US20090510134

  • 发明设计人 SURESH N. RAJAN;

    申请日2009-07-27

  • 分类号G11C5/06;

  • 国家 US

  • 入库时间 2022-08-21 18:09:38

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