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Semiconductor image sensing element and fabrication method therefor, and semiconductor image sensing device and fabrication method therefor
Semiconductor image sensing element and fabrication method therefor, and semiconductor image sensing device and fabrication method therefor
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机译:半导体图像感测元件及其制造方法,半导体图像感测装置及其制造方法
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摘要
A semiconductor image sensing element has a semiconductor element including an image sensing area, a peripheral circuit region, a plurality of electrode portions provided in the peripheral circuit region, and a plurality of micro-lenses provided on the image sensing area and an optical member having a configuration covering at least the image sensing area and bonded over the micro-lenses via a transparent bonding member. The side surface region of the optical member is formed with a light shielding film for preventing the irradiation of the image sensing area with a reflected light beam or a scattered light beam from the side surface region.
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