METHOD AND APPARATUS FOR FABRICATING SUPER-THIN SEMICONDUCTOR CHIP BY USING SUPER-THIN SOI SUBSTRATE FABRICATION METHOD, SUPER-THIN BACKLIGHTING TYPE SOLID-STATE IMAGE PICKUP DEVICE AND FABRICATION METHOD THEREFOR

摘要

PURPOSE: A method and an apparatus for fabricating a super-thin semiconductor device using a super-thin SOI substrate fabrication method, a super-thin backlighting type solid-state image pickup device and a fabrication method therefor are provided to improve productivity and quality by using a semiconductor layer formed on a base substrate across an insulating layer. CONSTITUTION: The first single crystalline semiconductor layer is formed on a seed substrate by using the first porous semiconductor peeling layer. The seed substrate is attached from a lateral part of the first single crystalline semiconductor layer in a state in which an insulating layer is disposed on a support substrate where the second single crystalline semiconductor layer is formed, through the second porous semiconductor peeling layer. The seed substrate is separated therefrom by using the first porous semiconductor peeling layer as a boundary. The support substrate is separated therefrom by using the second porous semiconductor peeling layer as a boundary.