Method to mitigate impact of UV and E-beam exposure on semiconductor device film properties by use of a bilayer film

摘要

Methods are provided for processing a substrate comprising a bilayer barrier film thereon. In one aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and ultraviolet curing the dielectric layer. In another aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and curing the dielectric layer with an electron beam treatment.