首页>
外国专利>
Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
展开▼
机译:具有电阻材料层作为存储节点的多位存储器件及其制造和操作方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Provided are a multi-bit memory device having resistive material layers as a storage node, and methods of manufacturing and operating the same. The memory device includes a substrate, a transistor formed on the substrate, and a storage node coupled to the transistor, wherein the storage node includes: a lower electrode connected to the substrate; a first phase change layer formed on the lower electrode; a first barrier layer overlying the first phase change layer; a second phase change layer overlying the first barrier layer; and an upper electrode formed on the second phase change layer.
展开▼