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Monolithic voltage reference device with internal, multi-temperature drift data and related testing procedures

机译:具有内部,多温度漂移数据和相关测试程序的整体式电压基准设备

摘要

A testing procedure may determine whether a monolithic voltage reference device meets a temperature drift specification. A first non-room temperature output voltage of the monolithic voltage reference device may be measured while the monolithic voltage reference device is at a first non-room temperature which is substantially different than room temperature. First non-room temperature information may be stored in a memory within the monolithic voltage reference device which is a function of the first non-room temperature output voltage. A second non-room temperature output voltage of the monolithic voltage reference device may be measured while the monolithic voltage reference device is at a second non-room temperature which is substantially different than the room temperature and the first non-room temperature. Second non-room temperature information may be stored in the memory without destroying the first non-room temperature information which is a function of the second non-room temperature output voltage. A determination may be made whether the monolithic voltage reference device meets the temperature drift specification based on a computation that is a function of both the first non-room temperature information and the second non-room temperature information.
机译:测试过程可以确定单片参考电压设备是否满足温度漂移规范。可以在单片参考电压装置处于与室温基本不同的第一非室温的同时测量单片电压参考装置的第一非室温输出电压。第一非室温信息可以被存储在单片电压基准装置内的存储器中,该信息是第一非室温输出电压的函数。可以在单片参考电压装置处于与室温和第一非室温基本上不同的第二非室温的同时测量单片电压参考装置的第二非室温输出电压。可以将第二非室温信息存储在存储器中,而不会破坏作为第二非室温输出电压的函数的第一非室温信息。可以基于作为第一非室温温度信息和第二非室温温度信息两者的函数的计算来确定单片电压基准装置是否满足温度漂移规格。

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