Parameter extraction procedure for microwave and millimetre-wave monolithic FET-type devices based on a scalable distributed model

摘要

A new parameter extraction procedure that uses a FET distributed model in conjunction with a standard optimization routine is presented. The model extraction is carried out by simultaneously fitting the S-parameters of various devices with different gate widths. This procedure has shown to be very robust and yields a very reliable identification of the model elements, both parasitic and intrinsic.