首页>
外国专利>
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
展开▼
机译:包括p型发射极和p型发射极中更高掺杂区的双极型功率半导体器件及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method. The invention relates to a bipolar power semiconductor component comprising a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter (5) are arranged successively in a vertical direction (v). The p-doped emitter (8) has a number of heavily p-doped zones (82) having a locally increased p-type doping.
展开▼