首页>
外国专利>
SIC semiconductor having junction barrier Schottky diode
SIC semiconductor having junction barrier Schottky diode
展开▼
机译:具有结势垒肖特基二极管的SIC半导体
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device having a junction barrier Schottky diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening of the insulation film and an ohmic electrode on the substrate; a terminal structure having a RESURF layer surrounding the cell region; and multiple second conductive type layers on an inner side of the RESURF layer. The second conductive type layers and the drift layer provide a PN diode. The Schottky electrode includes a first Schottky electrode contacting the second conductive type layers with ohmic contact and a second Schottky electrode contacting the drift layer with Schottky contact.
展开▼