首页> 外国专利> MEMORY SYSTEM HAVING NAND-BASED NOR AND NAND FLASHES AND SRAM INTEGRATED IN ONE CHIP FOR HYBRID DATA, CODE AND CACHE STORAGE

MEMORY SYSTEM HAVING NAND-BASED NOR AND NAND FLASHES AND SRAM INTEGRATED IN ONE CHIP FOR HYBRID DATA, CODE AND CACHE STORAGE

机译:具有基于NAND的NOR和NAND闪存以及集成在一个芯片中的SRAM的存储系统,用于混合数据,代码和缓存存储

摘要

A memory includes a NAND flash memory, a NOR flash memory and a SRAM manufactured on a single chip Both NAND and NOR memones are manufactured by the same NAND manufactuπng process The three memories share the same address bus, data bus, and pins of the single chip The address bus is bi-directional for receiving codes, data and addresses and transmitting output The data bus is also bi-directional for receiving and transmitting data One external chip enable pin and one external output enable pin are shared by the three memones to reduce the number of pins required for the single chip Both NAND and NOR memones have dual read page buffers and dual write page buffers for Read-While-Load and Wπte-While-Program operations to accelerate the read and wπte operations respectively A memory-mapped method is used to select different memones, status registers and dual read or write page buffers
机译:存储器包括NAND闪存,NOR闪存和在单个芯片上制造的SRAM。NAND和NOR备忘录均通过相同的NAND制造工艺制造。三个存储器共享同一地址总线,数据总线和单个引脚。芯片地址总线是双向的,用于接收代码,数据和地址以及传输输出数据总线也是双向的,用于三个备忘录共享一个外部芯片使能引脚和一个外部输出使能引脚,以减少单个芯片所需的引脚数NAND和NOR备忘录都具有双读页缓冲区和双写页缓冲区,分别用于读-写和写程序,以分别加速读和写操作。一种内存映射方法用于选择不同的备忘录,状态寄存器以及双读或写页面缓冲区

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号